IRF3315SPBF

HEXFET POWER MOSFET

N-Channel 150V 21A (Tc) 3.8W (Ta), 94W (Tc) Surface Mount D2PAK

Categories Discrete Semiconductor Products
Transistors – FETs, MOSFETs – Single
Manufacturer International Rectifier
Series HEXFET®
Packaging Bulk
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current – Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 82mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1,3pF @ 25V
FET Feature –
Power Dissipation (Max) 3.8W (Ta), 94W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB